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 Variable Capacitance Diodes
MA2ZV03
Silicon epitaxial planar type
Unit : mm
For VCO I Features
* Good linearity and large capacitance-ratio in CD VR relation * Small series resistance rD * S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
INDICATES CATHODE
0.4 0.15
1
2
0.4 0.15
1.7 0.1 2.5 0.2
Parameter Reverse voltage (DC) Junction temperature Storage temperature
Symbol VR Tj Tstg
Rating 6 150 -55 to +150
Unit V C C
0.9 0.1
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 7Z
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 5.20 2.10 2.1 Conditions Min Typ Max 10 5.80 2.58 2.6 0.3 Unit nA pF pF
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 - 0.06
I Absolute Maximum Ratings Ta = 25C
+ 0.1
0.3 - 0.05
+ 0.1
1.25 0.1
1
MA2ZV03
IF V F
120 Ta = 25C
Variable Capacitance Diodes
CD VR
100 f = 1 MHz Ta = 25C
100
IR T a
VR = 5 V
100
50
Diode capacitance CD (pF)
Forward current IF (mA)
30 20
80
60
10
Reverse current IR (nA)
0 2 4 6 8 10 12 14 16 18 20
10
1
40
5 3 2
0.1
20
0
0
1
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0
20
40
60
80 100 120 140 160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
CD Ta
1.04 f = 1 MHz V=3V
1.03
CD(Ta) CD(Ta = 25C)
1.02 10 V 1.01
1.00
0.99
0.98
0
20
40
60
80
100
Ambient temperature Ta (C)
2


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